RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
33
Around 18% lower latency
Faster reading speed, GB/s
16.7
9.6
Average value in the tests
Faster write speed, GB/s
11.8
8.6
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Report a bug
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
33
Read speed, GB/s
16.7
9.6
Write speed, GB/s
11.8
8.6
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2756
2286
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHYXPX-MID 8GB
Samsung M393B1K70CH0-YH9 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
Corsair CMSX64GX4M2A3200C22 32GB
G Skill Intl F4-3200C22-32GRS 32GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD16GX4M4B3200C16 4GB
Kingston KHX2400C11D3/4GX 4GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
SK Hynix HMT451S6BFR8A-PB 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK32GX4M4C3000C15 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 99P5723-006.A00G 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Report a bug
×
Bug description
Source link