Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs OCMEMORY OCM3200CL16D-16GBN 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Overall score
star star star star star
OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

Differences

  • Below the latency in the PassMark tests, ns
    35 left arrow 55
    Around 36% lower latency
  • Faster reading speed, GB/s
    19 left arrow 9.8
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 7.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 17000
    Around 1.13 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 55
  • Read speed, GB/s
    9.8 left arrow 19.0
  • Write speed, GB/s
    7.9 left arrow 9.0
  • Memory bandwidth, mbps
    17000 left arrow 19200
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2126 left arrow 2239
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons