RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs OCMEMORY OCM3200CL16D-16GBN 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Overall score
OCMEMORY OCM3200CL16D-16GBN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
55
Around 36% lower latency
Reasons to consider
OCMEMORY OCM3200CL16D-16GBN 8GB
Report a bug
Faster reading speed, GB/s
19
9.8
Average value in the tests
Faster write speed, GB/s
9.0
7.9
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
35
55
Read speed, GB/s
9.8
19.0
Write speed, GB/s
7.9
9.0
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2126
2239
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
OCMEMORY OCM3200CL16D-16GBN 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905734-063.A00G 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-8GRBB 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-2133C15-4GIS 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMW16GX4M2Z4600C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Kingston ACR512X64D3S13C9G 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9905665-023.A00G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR16GX4M2C3000C16 8GB
A-DATA Technology DQVE1908 512MB
Samsung M471A1K43CB1-CRCR 8GB
Report a bug
×
Bug description
Source link