RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Below the latency in the PassMark tests, ns

23 34

Around -48% lower latency
Faster reading speed, GB/s

17.2 8.6

Average value in the tests
Faster write speed, GB/s

13.0 5.8

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

1682 3004

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Absolute Latency

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