RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Crucial Technology BL8G30C15U4R.8FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Crucial Technology BL8G30C15U4R.8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
32
Around 13% lower latency
Reasons to consider
Crucial Technology BL8G30C15U4R.8FE 8GB
Report a bug
Faster reading speed, GB/s
17.9
12.4
Average value in the tests
Faster write speed, GB/s
12.9
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
32
Read speed, GB/s
12.4
17.9
Write speed, GB/s
9.6
12.9
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
3115
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Crucial Technology BL8G30C15U4R.8FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Transcend Information TS2GLH64V1B 16GB
Kingston 9965525-018.A00LF 4GB
Team Group Inc. DDR4 2666 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CM4B8G2J2666A15D 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3000C15-8GRRB 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KF3600C18D4/16GX 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-8GTZRN 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Corsair CM2X1024-6400C4 1GB
Corsair CMR32GX4M4C3333C16 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung M378A1K43EB2-CVF 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Jinyu CL16-16-16 D4-2400 8GB
Kingston KVR16N11/8-SP 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
AMD AE34G2139U2 4GB
Corsair CMK32GX4M4B2800C14 8GB
Report a bug
×
Bug description
Source link