RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
29
Around 3% lower latency
Reasons to consider
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Report a bug
Faster reading speed, GB/s
19.3
12.4
Average value in the tests
Faster write speed, GB/s
15.3
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
29
Read speed, GB/s
12.4
19.3
Write speed, GB/s
9.6
15.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
3557
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GTRS 16GB
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Team Group Inc. Team-Value-800 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905471-074.A00LF 8GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Samsung M393A1G40DB0-CPB 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-16GTRS 16GB
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT16GX4M2K4000C19 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M378A1G43DB0-CPB 8GB
Report a bug
×
Bug description
Source link