RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Micron Technology 4ATF51264HZ-3G2J1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Micron Technology 4ATF51264HZ-3G2J1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
42
Around 33% lower latency
Reasons to consider
Micron Technology 4ATF51264HZ-3G2J1 4GB
Report a bug
Faster reading speed, GB/s
15.7
12.4
Average value in the tests
Faster write speed, GB/s
12.4
9.6
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
42
Read speed, GB/s
12.4
15.7
Write speed, GB/s
9.6
12.4
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2329
2352
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 4ATF51264HZ-3G2J1 4GB
Corsair CMV4GX3M1B1600C11 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Kingston 99U5471-056.A00LF 8GB
Corsair CMK32GX4M4D3600C18 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CM4B4G1J2400A14K 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
Qimonda 72T128420EFA3SB2 1GB
A-DATA Technology AX4S2800316G18-B 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston KHX2666C16S4/16G 16GB
Kingston 9905403-174.A00LF 2GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-4266C16-8GTZR 8GB
Report a bug
×
Bug description
Source link