RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
28
Around -4% lower latency
Faster reading speed, GB/s
20.6
12.4
Average value in the tests
Faster write speed, GB/s
18.4
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
27
Read speed, GB/s
12.4
20.6
Write speed, GB/s
9.6
18.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
3826
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMA82GR7AFR4N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 99U5315-035.A00LF 1GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CM4X16GE2666C18S4 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Kingston KF560C40-16 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2133C15-4GVK 4GB
Kingston KVR26N19D8/16 16GB
Kingston ACR32D4S2S8ME-16 16GB
ASint Technology SLA304G08-GGNHM 4GB
Transcend Information TS512MSH64V1H 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X8GF2400C14K4 8GB
Report a bug
×
Bug description
Source link