RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Faster reading speed, GB/s

17.3 13.4

Average value in the tests
Faster write speed, GB/s

14.5 9.0

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2423 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns