RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3000C15-16GVR 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3000C15-16GVR 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
G Skill Intl F4-3000C15-16GVR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
30
Around 3% lower latency
Reasons to consider
G Skill Intl F4-3000C15-16GVR 16GB
Report a bug
Faster reading speed, GB/s
17.5
13.4
Average value in the tests
Faster write speed, GB/s
14.2
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3000C15-16GVR 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
30
Read speed, GB/s
13.4
17.5
Write speed, GB/s
9.0
14.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
3520
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
G Skill Intl F4-3000C15-16GVR 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3000C15-16GVR 16GB
Kingston 99U5471-012.A00LF 4GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Kingston 9905458-017.A01LF 4GB
Kingston KHX3466C19D4/8G 8GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK8GX4M2A2133C13 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3466C16-16GTZ 16GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.CAGPN.DF40B 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905624-019.A00G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
A-DATA Technology DQVE1908 512MB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
Report a bug
×
Bug description
Source link