RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
30
Around -7% lower latency
Faster reading speed, GB/s
18.1
10.6
Average value in the tests
Faster write speed, GB/s
15.6
6.8
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
28
Read speed, GB/s
10.6
18.1
Write speed, GB/s
6.8
15.6
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1479
3693
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-2800C16-8GVG 8GB
Kingston 99U5458-002.A00LF 2GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMK8GX4M2B4133C19 4GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C16-8GISB 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX4000C19D4/8GX 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Kingston KHX318C10FR/8G 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M2F4400C19 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Report a bug
×
Bug description
Source link