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Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
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Below the latency in the PassMark tests, ns
30
71
Around 58% lower latency
Faster reading speed, GB/s
10.6
6.1
Average value in the tests
Faster write speed, GB/s
6.8
4.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
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Higher memory bandwidth, mbps
10600
8500
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
30
71
Read speed, GB/s
10.6
6.1
Write speed, GB/s
6.8
4.8
Memory bandwidth, mbps
8500
10600
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1066 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1479
1092
Samsung M471B5673FH0-CF8 2GB RAM comparisons
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Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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