RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Micron Technology 4ATF51264HZ-2G3E2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Reasons to consider
Micron Technology 4ATF51264HZ-2G3E2 4GB
Report a bug
Faster reading speed, GB/s
15.8
13.4
Average value in the tests
Faster write speed, GB/s
12.2
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
29
Read speed, GB/s
13.4
15.8
Write speed, GB/s
9.0
12.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
2865
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Kingston 99U5403-492.A00LF 8GB
AMD R748G2606U2S 8GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix HMA451U7MFR8N-TF 4GB
Samsung M378A1G43TB1-CTD 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
Kingston KVR16N11/8-SP 8GB
Avant Technology W642GU42J2320NH 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
V-Color Technology Inc. TC416G24D817 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology GD2.111881.002 4GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMW8GX4M1Z3600C18 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Samsung M378A1K43EB2-CWE 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire CL16-18-18 D4-3200 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kllisre 8GB
Report a bug
×
Bug description
Source link