RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung V-GeN D4S4GL30A16TS5 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Samsung V-GeN D4S4GL30A16TS5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
62
Around 53% lower latency
Faster write speed, GB/s
9.0
7.0
Average value in the tests
Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
Faster reading speed, GB/s
16.7
13.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
62
Read speed, GB/s
13.4
16.7
Write speed, GB/s
9.0
7.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
1808
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Kingston 9905403-515.A00LF 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C18-32GVK 32GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
Crucial Technology CT102464BA160B.M16 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905744-062.A00G 32GB
Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology W6451U67J7240NB 4GB
AMD R5S38G1601U2S 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Kingston 9905458-017.A01LF 4GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Report a bug
×
Bug description
Source link