RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung V-GeN D4S4GL30A16TS5 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Samsung V-GeN D4S4GL30A16TS5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
62
Around 53% lower latency
Faster write speed, GB/s
9.0
7.0
Average value in the tests
Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
Faster reading speed, GB/s
16.7
13.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
62
Read speed, GB/s
13.4
16.7
Write speed, GB/s
9.0
7.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
1808
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung V-GeN D4S4GL30A16TS5 4GB
Kingston KVR800D2N6/2G 2GB
Corsair CMD16GX4M4B3200C14 4GB
Kingston 99U5428-063.A00LF 8GB
Corsair CMV16GX4M1A2400C16 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMW64GX4M4Z2933C16 16GB
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-2133C15-8GRB 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMSX64GX4M2A2666C18 32GB
Corsair CMX4GX3M2A1600C9 2GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3200C15-16GTZ 16GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2400C16-16GRS 16GB
Kingston ASU16D3LS1KFG/4G 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Samsung M395T2863QZ4-CF76 1GB
Ramsta Ramsta-2400Mhz-8G 8GB
Kingston 99U5474-023.A00LF 4GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Report a bug
×
Bug description
Source link