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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M471A5244CB0-CTD 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M471A5244CB0-CTD 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Samsung M471A5244CB0-CTD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Samsung M471A5244CB0-CTD 4GB
Report a bug
Below the latency in the PassMark tests, ns
39
62
Around -59% lower latency
Faster reading speed, GB/s
15.5
7.4
Average value in the tests
Faster write speed, GB/s
11.5
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M471A5244CB0-CTD 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
39
Read speed, GB/s
7.4
15.5
Write speed, GB/s
5.9
11.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1612
2264
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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