Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT8G4DFS832A.C8FE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT8G4DFS832A.C8FE 8GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Overall score
star star star star star
Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 32
    Around 13% lower latency
  • Faster reading speed, GB/s
    21.6 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    15.5 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 8500
    Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 32
  • Read speed, GB/s
    10.9 left arrow 21.6
  • Write speed, GB/s
    7.1 left arrow 15.5
  • Memory bandwidth, mbps
    8500 left arrow 25600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1668 left arrow 3684
RAM Latency Calculator
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