RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT8G4DFS832A.C8FJ 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Reasons to consider
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Report a bug
Faster reading speed, GB/s
17.9
10.9
Average value in the tests
Faster write speed, GB/s
15.1
7.1
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
10.9
17.9
Write speed, GB/s
7.1
15.1
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1668
3443
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM comparisons
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2133C15-16GIS 16GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hypertec G2RT-4AFT00 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMK16GX4M2L3200C16 8GB
Kingston 99U5429-007.A00LF 2GB
Kingston 9905678-027.A00G 8GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-3200C16-16GRS 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-3200C16-8GVSB 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Report a bug
×
Bug description
Source link