RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
65
Around -91% lower latency
Faster write speed, GB/s
14.5
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
34
Read speed, GB/s
3,580.8
17.3
Write speed, GB/s
1,592.0
14.5
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3606
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Kingston 99U5469-045.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339J.D8F 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4X16GE2400C14K4 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
A-DATA Technology DQKD1A08 1GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Corsair CMD16GX3M2A1866C9 8GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M393A4K40BB1-CRC 32GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M4A2400C12 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
V-GEN D4H4GL30A8TS5 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMR64GX4M8C3000C15 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung T471A1K43CB1-CRC 8GB
Report a bug
×
Bug description
Source link