RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
65
Around -91% lower latency
Faster write speed, GB/s
14.5
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
34
Read speed, GB/s
3,580.8
17.3
Write speed, GB/s
1,592.0
14.5
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3606
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL18-22-22 D4-3600
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston HP26D4S9S1ME-4 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905701-006.A00G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston HP32D4U8S8HD-8X 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3600C18-32GTRS 32GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M471A1G43DB0-CPB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3600C14-16GVKA 16GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMD16GX4M4A2666C15 4GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CM4X8GE2400C15K4 8GB
G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
Report a bug
×
Bug description
Source link