RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Chun Well Technology Holding Limited D4U0832160B 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Chun Well Technology Holding Limited D4U0832160B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
20.5
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U0832160B 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
65
Around -103% lower latency
Faster write speed, GB/s
14.5
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
32
Read speed, GB/s
3,580.8
20.5
Write speed, GB/s
1,592.0
14.5
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
3379
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
V-GEN D4H4GL26A8TS5 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB
AMD R538G1601U2S 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD16GX4M2B3866C18 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M4A2666C15 8GB
Team Group Inc. UD5-6400 16GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3200C16-16GVR 16GB
Kingston 99U5584-017.A00LF 4GB
Kingston 9905668-001.A00G 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-8GTRG 8GB
Report a bug
×
Bug description
Source link