RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3200C14-8GTZ 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-3200C14-8GTZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
17.9
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C14-8GTZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
65
Around -124% lower latency
Faster write speed, GB/s
15.3
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
29
Read speed, GB/s
3,580.8
17.9
Write speed, GB/s
1,592.0
15.3
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3567
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3200C14-8GTZ 8GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-2800C15-8GVSB 8GB
Kingston 9965525-140.A00LF 8GB
Panram International Corporation M424051 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
Samsung M378B5673FH0-CH9 2GB
Mushkin MR[ABC]4U266GHHF8G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-8GIS 8GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX2666C16/8G 8GB
Samsung M378B5773DH0-CH9 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-2666C19-8GVK 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905665-021.A00G 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Report a bug
×
Bug description
Source link