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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
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Faster reading speed, GB/s
3
16.4
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
65
Around -110% lower latency
Faster write speed, GB/s
10.5
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
31
Read speed, GB/s
3,580.8
16.4
Write speed, GB/s
1,592.0
10.5
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
3039
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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