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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
16.4
测试中的平均数值
需要考虑的原因
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
65
左右 -110% 更低的延时
更快的写入速度,GB/s
10.5
1,592.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
31
读取速度,GB/s
3,580.8
16.4
写入速度,GB/s
1,592.0
10.5
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
572
3039
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Heoriady HX2666CX15D4/4G 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Mushkin 99[2/7/4]200[F/T] 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2800C16-8GVR 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3733C17-16GTZR 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4000C17-8GVKB 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CM4X8GE2400C15K4 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
G Skill Intl F4-2666C19-8GNT 8GB
Avant Technology F6451U64F9333G 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
SK Hynix HMT351S6CFR8C-PB 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
AMD R534G1601U1S-UO 4GB
Kingston X0N6VG-HYD2 16GB
报告一个错误
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Bug description
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