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Samsung M4 70T2953EZ3-CE6 1GB
Mushkin 99[2/7/4]200[F/T] 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Mushkin 99[2/7/4]200[F/T] 8GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10.5
    测试中的平均数值
Mushkin 99[2/7/4]200[F/T] 8GB 需要考虑的原因
Mushkin 99[2/7/4]200[F/T] 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 73
    左右 -59% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Mushkin 99[2/7/4]200[F/T] 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 46
  • 读取速度，GB/s
    3,510.5 left arrow 10.5
  • 写入速度，GB/s
    1,423.3 left arrow 8.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    476 left arrow 2368

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Mushkin 99[2/7/4]200[F/T] 8GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Apacer Technology GD2.1527WC.001 8GB
Apacer Technology GD2.1527WC.001 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Crucial Technology CT8G4DFS824A.M8FH 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP26D4S9S8MHF-8 8GB
Kingston HP26D4S9S8MHF-8 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905630-048.A00G 16GB
Kingston 9905630-048.A00G 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMU32GX4M2C3000C15 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK8GX4M2B4133C19 4GB
Corsair CMK8GX4M2B4133C19 4GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
G Skill Intl F4-2666C15-8GVK 8GB
G Skill Intl F4-2666C15-8GVK 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM