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Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Kingston ACR256X64D3S1333C9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    11.9 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 8.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
报告一个错误

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    11.9 left arrow 10.5
  • 写入速度，GB/s
    8.5 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 1570

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB RAM的比较

Micron Technology 8KTF51264HZ-1G9P1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C
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Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
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Crucial Technology CT4G4DFS8266.C8FF 4GB
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Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
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Kingston KVR800D2N6/2G 2GB
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Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
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Dust Leopard DDR4-2400 CL17 8GB 8GB
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INTENSO 5641160 8GB
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A-DATA Technology DQKD1A08 1GB
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Ramos Technology RMB4GB58BCA3-13HC 4GB
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Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
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SK Hynix HMA42GR7AFR4N-UH 16GB
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Hexon Technology Pte Ltd HEXON 1GB
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Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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