Micron Technology 8KTF51264HZ-1G9P1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Micron Technology 8KTF51264HZ-1G9P1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

总分

Micron Technology 8KTF51264HZ-1G9P1 4GB

Micron Technology 8KTF51264HZ-1G9P1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

差异规格评论

差异

Micron Technology 8KTF51264HZ-1G9P1 4GB

需要考虑的原因
Micron Technology 8KTF51264HZ-1G9P1 4GB

报告一个错误

更快的读取速度，GB/s

13.4 10.5

测试中的平均数值
更快的写入速度，GB/s

9.2 8.4

测试中的平均数值
更高的内存带宽，mbps

14900 10600

左右 1.41% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时

规格

完整的技术规格清单

Micron Technology 8KTF51264HZ-1G9P1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 28
读取速度，GB/s

13.4 10.5
写入速度，GB/s

9.2 8.4
内存带宽，mbps

14900 10600

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-10-9-28 / 1866 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2509 1570

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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