Micron Technology 8KTF51264HZ-1G9P1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

総合得点

Micron Technology 8KTF51264HZ-1G9P1 4GB

Micron Technology 8KTF51264HZ-1G9P1 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

相違点仕様コメント

相違点

Micron Technology 8KTF51264HZ-1G9P1 4GB

考慮すべき理由
Micron Technology 8KTF51264HZ-1G9P1 4GB

バグを報告する

読み出し速度の高速化、GB/s

13.4 10.5

テスト平均値
書き込み速度の高速化、GB/s

9.2 8.4

テスト平均値
より高いメモリ帯域幅、mbps

14900 10600

周辺 1.41% 高帯域

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 39

周辺 -39% 低遅延

仕様

技術仕様の完全リスト

Micron Technology 8KTF51264HZ-1G9P1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

39 28
読み出し速度、GB/s

13.4 10.5
書き込み速度、GB/秒

9.2 8.4
メモリ帯域幅、mbps

14900 10600

Other

商品説明

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
タイミング / クロック速度

9-10-9-28 / 1866 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2509 1570

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Essencore Limited KD4AGU880-36A180U 16GB

Essencore Limited KD4AGU880-36A180U 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

V-Color Technology Inc. TC416G24D817 16GB

V-Color Technology Inc. TC416G24D817 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB