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Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G9P1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB vs Micron Technology 8KTF51264HZ-1G9P1 4GB

总分
star star star star star
Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

总分
star star star star star
Micron Technology 8KTF51264HZ-1G9P1 4GB

Micron Technology 8KTF51264HZ-1G9P1 4GB

差异 规格 评论

差异

Micron Technology 8KTF51264HZ-1G6E1 4GB 需要考虑的原因
Micron Technology 8KTF51264HZ-1G6E1 4GB
报告一个错误
Micron Technology 8KTF51264HZ-1G9P1 4GB 需要考虑的原因
Micron Technology 8KTF51264HZ-1G9P1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 46
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    14900 left arrow 12800
    左右 1.16 更高的带宽

规格

完整的技术规格清单
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G9P1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    46 left arrow 39
  • 读取速度，GB/s
    12.0 left arrow 13.4
  • 写入速度，GB/s
    7.5 left arrow 9.2
  • 内存带宽，mbps
    12800 left arrow 14900
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-10-9-28 / 1866 MHz
  • 排名PassMark (越多越好)
    1959 left arrow 2509

Micron Technology 8KTF51264HZ-1G6E1 4GB RAM的比较

Crucial Technology BLS8G4D240FSB.16FAR 8GB

Micron Technology 8KTF51264HZ-1G9P1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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