SK Hynix HYMP112U64CP8-S5 1GB vs Teikon TMA851U6CJR6N-VKSC 4GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 16.1

测试中的平均数值

Teikon TMA851U6CJR6N-VKSC 4GB

需要考虑的原因
Teikon TMA851U6CJR6N-VKSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

62 66

左右 -6% 更低的延时
更快的写入速度，GB/s

6.0 2,978.2

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Teikon TMA851U6CJR6N-VKSC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 62
读取速度，GB/s

2,929.1 16.1
写入速度，GB/s

2,978.2 6.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

511 1586

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston 9965525-018.A00LF 4GB

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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Kingston 99U5428-101.A00LF 8GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB