RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Gloway International (HK) STK4U2400D17161C 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Gloway International (HK) STK4U2400D17161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Below the latency in the PassMark tests, ns
65
67
Around 3% lower latency
Faster reading speed, GB/s
3
15.3
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17161C 16GB
Report a bug
Faster write speed, GB/s
8.2
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
67
Read speed, GB/s
3,580.8
15.3
Write speed, GB/s
1,592.0
8.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2042
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Gloway International (HK) STK4U2400D17161C 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Gloway International (HK) STK4U2400D17161C 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2Z3600C18 8GB
Kingston 9905403-444.A00LF 4GB
Samsung M378B5273BH1-CH9 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMZ32GX3M4A1866C10 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2Z3600C18 8GB
Samsung M393B5170FH0-CK0 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK128GX4M8A2400C14 16GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Super Talent F24SB8GH 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Report a bug
×
Bug description
Source link