RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung M378A1K43EB2-CWE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung M378A1K43EB2-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
17.6
Average value in the tests
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
65
Around -97% lower latency
Faster write speed, GB/s
12.0
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
33
Read speed, GB/s
3,580.8
17.6
Write speed, GB/s
1,592.0
12.0
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
572
2910
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 2400 CL11 Series 8GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Kingston 99U5428-040.A00LF 4GB
Kingston KHX2400C15S4/8G 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMD32GX4M4B2800C14 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Hoodisk Electronics Co Ltd GKH800UD51208-1600 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Samsung M391B5673EH1-CH9 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
A-DATA Technology DQVE1908 512MB
Kingston 99U5625-015.A00G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905678-041.A00G 4GB
Samsung M3 78T2953EZ3-CF7 1GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Kingston 9905702-010.A00G 8GB
Avant Technology W6451U66J7240ND 4GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Report a bug
×
Bug description
Source link