RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
63
Around 62% lower latency
Faster write speed, GB/s
12.5
8.2
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Report a bug
Faster reading speed, GB/s
16.6
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
63
Read speed, GB/s
16.0
16.6
Write speed, GB/s
12.5
8.2
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1863
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Mushkin 99[2/7/4]183 8GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905712-048.A00G 16GB
Kingston 99U5458-008.A00LF 4GB
Kingston XF875V-MIH 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMD64GX4M8B2800C14 8GB
Kingston KHX2800C14D4/8GX 8GB
V-GEN D4H8GS24A8 8GB
Corsair CM5S16GM4800A40K2 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Kingston 99U5474-022.A00LF 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMW16GX4M2A2666C16 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston KF2933C17S4/32G 32GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Report a bug
×
Bug description
Source link