RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
17
16
Average value in the tests
Faster write speed, GB/s
12.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
17.0
Write speed, GB/s
12.5
12.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2938
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB RAM comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX3600C17D4/8GX 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C14-16GTZN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-3200C16-32GTRG 32GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX2666C16S4/32G 32GB
Kingston KHX426C13/8G 8GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Corsair CM3X8GA1600C10V2 8GB
G Skill Intl F4-3000C15-4GTZ 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905704-007.A00G 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
AMD R5316G1609U2K 8GB
Corsair CMK64GX4M4B3000C15 16GB
Crucial Technology CT51264BA160BJ.M8F 4GB
AMD R334G1339U2S 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-2666C19-32GNT 32GB
Report a bug
×
Bug description
Source link