RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around 8% lower latency
Faster reading speed, GB/s
16
15.1
Average value in the tests
Faster write speed, GB/s
12.5
11.6
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
26
Read speed, GB/s
16.0
15.1
Write speed, GB/s
12.5
11.6
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2579
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT51264BF160BJ.M8F 4GB
G Skill Intl F4-2400C15-16GFT 16GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3400C16-16GTZ 16GB
Kingston KF548C38-16 16GB
Gloway International (HK) STK4U2400D17042C 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905630-048.A00G 16GB
AMD AE34G1601U1 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX2666C13D4/4GX 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Jinyu 16GB
Kingston KHX318C10FR/8G 8GB
Kingston KCRXJ6-MIE 16GB
Report a bug
×
Bug description
Source link