RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around 8% lower latency
Faster reading speed, GB/s
16
15.1
Average value in the tests
Faster write speed, GB/s
12.5
11.6
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
26
Read speed, GB/s
16.0
15.1
Write speed, GB/s
12.5
11.6
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2579
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Kingston ACR26D4S9D8MD-16 16GB
SpecTek Incorporated PSD34G13332 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston 99U5584-001.A00LF 4GB
Kingston ACR26D4U9D8MH-16 16GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Kingston 99U5584-004.A00LF 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3733C17-16GTZSW 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston 9905700-046.A00G 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMW64GX4M8C3466C16 8GB
Samsung M391B5673FH0-CH9 2GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
Samsung M393B1G70BH0-CK0 8GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CM4X8GF2400C16N2 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2133C15-4GRK 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2800C16-4GVR 4GB
Report a bug
×
Bug description
Source link