RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4DFS8266.C8FJ 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster write speed, GB/s
12.5
10.7
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Report a bug
Faster reading speed, GB/s
16.3
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
16.3
Write speed, GB/s
12.5
10.7
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2942
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS8266.C8FJ 8GB
SK Hynix DDR2 800 2G 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 99U5624-001.A00G 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Kllisre KRE-D3U1600M/8G 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
OCZ OCZ3G2000LV2G 2GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Kingston 9905584-016.A00LF 4GB
Corsair CMK32GX4M2F4000C19 16GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Samsung M393B2G70BH0-YK0 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
A-DATA Technology DDR3 1333G 2GB
Samsung M378A1K43BB1-CPB 8GB
Qimonda 64T128020EDL2.5C2 1GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Report a bug
×
Bug description
Source link