RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4SFRA266.M8FRS 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
34
Around 29% lower latency
Reasons to consider
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Report a bug
Faster reading speed, GB/s
16.1
16
Average value in the tests
Faster write speed, GB/s
13.1
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
34
Read speed, GB/s
16.0
16.1
Write speed, GB/s
12.5
13.1
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3047
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB RAM comparisons
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
Corsair CMW32GX4M4Z3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Kingston 99P5474-014.A00LF 4GB
Kllisre D4 8G 8GB
SK Hynix DDR2 800 2G 2GB
Kingston ACR24D4U7D8MB-16 16GB
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2666C13D4/8GX 8GB
Kingston 9905469-143.A00LF 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston KHX3200C18D4/4G 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
DSL Memory D4SS12082SH21A-A 8GB
AMD AE34G2139U2 4GB
G Skill Intl F4-4266C19-8GTRG 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMZ8GX3M2A1600C9 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Report a bug
×
Bug description
Source link