RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Essencore Limited IM4AGU88N26-GIIHMB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
64
Around 63% lower latency
Faster write speed, GB/s
12.5
7.8
Average value in the tests
Reasons to consider
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Report a bug
Faster reading speed, GB/s
16.2
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
64
Read speed, GB/s
16.0
16.2
Write speed, GB/s
12.5
7.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1909
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Essencore Limited KD4AGU880-32A160X 16GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology D12.2755BS.001 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Samsung M471B5673FH0-CF8 2GB
Kingston KV0M5R-MIE 8GB
Samsung 1600 CL10 Series 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Team Group Inc. UD5-6400 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK32GX4M4Z2933C16 8GB
Kingston 9965525-018.A00LF 4GB
Corsair CMT64GX4M4K3600C16 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4400C16-8GVK 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C16-32GTZR 32GB
Apacer Technology 78.01G86.9H50C 1GB
Heoriady M378A1K43BB2-CTD 8GB
Report a bug
×
Bug description
Source link