RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-8GRR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C15-8GRR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3000C15-8GRR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Faster reading speed, GB/s
16
12.1
Average value in the tests
Faster write speed, GB/s
12.5
10.4
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3000C15-8GRR 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-8GRR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
12.1
Write speed, GB/s
12.5
10.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2897
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3000C15-8GRR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5584-004.A00LF 4GB
Kingston 9965690-002.A00G 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GRR 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905702-204.A00G 8GB
Samsung DDR3 8GB 1600MHz 8GB
A-DATA Technology DDR4 2800 2OZ 4GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
A-DATA Technology DDR2 800G 2GB
SK Hynix HMA84GR7AFR4N-UH 32GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3000C14-16GTZR 16GB
Qimonda 72T128420EFA3SB2 1GB
SK Hynix HMA851U6DJR6N-XN 4GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK64GX4M4D3000C16 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-4400C18-8GTZR 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CMK16GX4M4C3000C16 4GB
Report a bug
×
Bug description
Source link