RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C16-8GVSB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C16-8GVSB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3000C16-8GVSB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3000C16-8GVSB 8GB
Report a bug
Faster reading speed, GB/s
16.2
16
Average value in the tests
Faster write speed, GB/s
12.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C16-8GVSB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
16.2
Write speed, GB/s
12.5
12.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2902
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3000C16-8GVSB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CE6 2GB
A-DATA Technology AX4S2800316G18-B 16GB
Corsair VS1GB800D2 1GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Kingston KVR533D2N4 512MB
Kingston HP26D4U6D8ME-16X 16GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Kingston 9965516-112.A00LF 16GB
EVGA 16G-D4-2666-MR 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston ACR32D4U2S1ME-8 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston LV26D4S9S8HJ-8 8GB
Samsung M395T2863QZ4-CF76 1GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Kingston KVR16N11/8-SP 8GB
Transcend Information JM2666HLB-16G 16GB
Kingston 99U5474-028.A00LF 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingston 9905584-016.A00LF 4GB
INTENSO 5641152 4GB
Report a bug
×
Bug description
Source link