RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C14-16GTZSK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C14-16GTZSK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around 8% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C14-16GTZSK 16GB
Report a bug
Faster reading speed, GB/s
19
16
Average value in the tests
Faster write speed, GB/s
17.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
26
Read speed, GB/s
16.0
19.0
Write speed, GB/s
12.5
17.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
4022
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C14-16GTZSK 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16KTF1G64AZ-1G4E1 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2666C19-8GIS 8GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology GD2.1527WC.001 8GB
Kingston 9905403-038.A00LF 4GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Samsung M471B5273CH0-CH9 4GB
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZSK 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Golden Empire CL15-17-17 D4-3000 8GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9905625-036.A00G 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CM4X16GE2133C13K8 16GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMV16GX4M1L2400C16 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C14-8GFX 8GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M2Z3600C20 8GB
Report a bug
×
Bug description
Source link