RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C19-16GTZKK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4000C19-16GTZKK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C19-16GTZKK 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
19.8
16
Average value in the tests
Faster write speed, GB/s
18.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
19.8
Write speed, GB/s
12.5
18.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
4128
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C19-16GTZKK 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX2800C14D4/8GX 8GB
Corsair CM4X16GC3000C15K4 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C19-16GTZKK 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Mushkin 99[2/7/4]191[F/T] 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Kingston 99U5428-063.A00LF 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Strontium EVMT8G1600U86S 8GB
A-DATA Technology DDR4 2400 16GB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
Kingston 9905403-02X.B00LF 4GB
Gloway International (HK) STK4U2400D17081C 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M391A1G43DB0-CPB 8GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-2400C15-8GRK 8GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGPP.40C0B 8GB
Report a bug
×
Bug description
Source link