RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4600C19-8GTZSWC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4600C19-8GTZSWC 8GB
Report a bug
Below the latency in the PassMark tests, ns
16
24
Around -50% lower latency
Faster reading speed, GB/s
22.3
16
Average value in the tests
Faster write speed, GB/s
21.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
16
Read speed, GB/s
16.0
22.3
Write speed, GB/s
12.5
21.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3952
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4600C19-8GTZSWC 8GB RAM comparisons
Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4600C19-8GTZSWC 8GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9965600-023.A00G 16GB
AMD AE34G1601U1 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
SK Hynix DDR2 800 2G 2GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Kingston KF552C40-16 16GB
Corsair CMD128GX4M8B3200C16 16GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMD64GX4M8A2400C14 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-5333C22-8GTRG 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Samsung M393B5170FH0-CH9 4GB
Kingston 99U5723-002.A00G 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK32GX4M2A2800C16 16GB
Samsung M4 70T2864QZ3-CE6 1GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3200C16-16GVK 16GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A1K1KBB0-CPB 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9965604-008.D00G 16GB
Report a bug
×
Bug description
Source link