RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingmax Semiconductor GLNG43F-18---------- 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Kingmax Semiconductor GLNG43F-18---------- 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
64
Around 63% lower latency
Faster write speed, GB/s
12.5
8.8
Average value in the tests
Reasons to consider
Kingmax Semiconductor GLNG43F-18---------- 8GB
Report a bug
Faster reading speed, GB/s
16.6
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
64
Read speed, GB/s
16.0
16.6
Write speed, GB/s
12.5
8.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2065
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingmax Semiconductor GLNG43F-18---------- 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Avant Technology F641GU67F9333G 8GB
Kingston 9905630-033.A00G 16GB
Kingston 99U5584-001.A00LF 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX3600C18D4/16GX 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Transcend Information TS512MSH64V4H 4GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston KF3733C19D4/16GX 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX3333C17D4/4GX 4GB
Samsung M393A1G40DB0-CPB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2666C19-8GSXK 8GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Samsung M378B5273DH0-CH9 4GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Kingston 99U5471-012.A00 4GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Report a bug
×
Bug description
Source link