RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
39
Around 38% lower latency
Faster reading speed, GB/s
16
14.8
Average value in the tests
Faster write speed, GB/s
12.5
12.3
Average value in the tests
Reasons to consider
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
39
Read speed, GB/s
16.0
14.8
Write speed, GB/s
12.5
12.3
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
2188
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Kingston 9905403-134.A00LF 2GB
Kingston 99P5723-006.A00G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Transcend Information TS2GLH64V4B 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
AMD R534G1601U1S-UO 4GB
Kingston KY7N41-MID 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Apacer Technology 78.B1GET.AU00C 4GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Report a bug
×
Bug description
Source link