RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A1K43EB2-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A1K43EB2-CWE 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Reasons to consider
Samsung M378A1K43EB2-CWE 8GB

Faster reading speed, GB/s

17.6 16

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M378A1K43EB2-CWE 8GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2925 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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