RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
71
Around 66% lower latency
Faster reading speed, GB/s
16
14.5
Average value in the tests
Faster write speed, GB/s
12.5
8.0
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
71
Read speed, GB/s
16.0
14.5
Write speed, GB/s
12.5
8.0
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1863
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-061.A00LF 2GB
Kingston 9905624-016.A00G 8GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK32GX4M4D3000C16 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMR32GX4M2C3200C16 16GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Kingston KVR800D2N6/2G 2GB
Panram International Corporation W4N2666PS-8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Kingston 9905469-143.A00LF 4GB
Corsair CM4X16GC3200C16K2 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15Z8GNT 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston 9965516-430.A00G 16GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Crucial Technology CT102464BF160B-16F 8GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Kingston 99U5469-045.A00LF 4GB
Avant Technology J641GU42J5213ND 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 9905665-021.A00G 4GB
Report a bug
×
Bug description
Source link