RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Team Group Inc. DDR4 3000 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Team Group Inc. DDR4 3000 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Team Group Inc. DDR4 3000 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Team Group Inc. DDR4 3000 4GB
Report a bug
Faster reading speed, GB/s
16.7
16
Average value in the tests
Faster write speed, GB/s
13.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Team Group Inc. DDR4 3000 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
32
Read speed, GB/s
16.0
16.7
Write speed, GB/s
12.5
13.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3064
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Team Group Inc. DDR4 3000 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
Corsair CMD32GX4M4B3200C16 8GB
Samsung M393B2G70BH0-CK0 16GB
Avant Technology W642GU42J5213N2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. DDR4 3000 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Essencore Limited KD48GU880-34A170X 8GB
Kingston 9905403-500.A01LF 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
V-Color Technology Inc. TA48G32S816SK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M386A8K40CM2-CRC 64GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Kingston 9905458-017.A01LF 4GB
A-DATA Technology AX4S2800316G18-B 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905624-004.A00G 4GB
Kingston 9965433-034.A00LF 4GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CM3X1G1333C9 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMT32GX4M2Z3200C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Panram International Corporation PUD42400C168GVS 8GB
Report a bug
×
Bug description
Source link