RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663QZ3-CE6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Compare
Samsung M4 70T5663QZ3-CE6 2GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Overall score
Samsung M4 70T5663QZ3-CE6 2GB
Overall score
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
Below the latency in the PassMark tests, ns
68
86
Around 21% lower latency
Faster reading speed, GB/s
3
14.3
Average value in the tests
Reasons to consider
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Report a bug
Faster write speed, GB/s
8.1
1,702.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
68
86
Read speed, GB/s
3,886.6
14.3
Write speed, GB/s
1,702.6
8.1
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
654
1658
Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Kingston ACR26D4S9S8MH-8 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C10D3/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GS6CJRJR-VK 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Unifosa Corporation HU564404EP0200 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M471A5143DB0-CPB 4GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Kingston 9905622-024.A00G 4GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Samsung M471A2G43AB2-CWE 16GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378A1G44AB0-CWE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kllisre DDR4-8GB 8GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
Report a bug
×
Bug description
Source link